? design assistance ? assembly assistance ? die handling consultancy ? hi - rel die qualification ? hot & cold die probing ? electrical test & trimming ? customised pack sizes / qtys ? support for all industry recognised ? 100% visual inspection contact baredie@micross.com for price, delivery and to place orders HMC361 supply formats: o waffle pack o gel pak o tape & reel ? onsite storage, stockholding & scheduling ? on - site failure analysis ? bespoke 24 hour monitored storage systems for secure long term product support o mil - std 883 condition a o mil - std 883 condition a ? on - site failure analysis www.analog.com www.micross.com
analog devices welcomes hittite microwave corporation no content on the attached documen t has changed www.analog.com www.hittite.com
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frequency dividers - chip 1 1 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC361 gaas hbt mmic divide-by-2, dc - 11 ghz v07.0109 general description features functional diagram the HMC361 is a low noise divide-by-2 static divider with ingap gaas hbt technology that has a small size of 1.14 x 0.69 mm. this device operates from dc (with a square wave input) to 11 ghz input fre- quency with a single +5v dc supply. the low addi- tive ssb phase noise of -148 dbc/hz at 100 khz offset helps the user maintain good system noise performance. ultra low ssb phase noise: -148 dbc/hz wide bandwidth output power: 3 dbm single dc supply: +5v small size: 1.14 x 0.69 x 0.1 mm typical applications prescaler for dc to x band pll applications: ? satellite communication systems ? fiber optic ? point-to-point and point-to-multi-point radios ? vsat electrical specifi cations, t a = +25 c, 50 ohm system, vcc = 5v parameter conditions min. typ. max. units maximum input frequency 11 12 ghz minimum input frequency sine wave input. [1] 0.2 0.5 ghz input power range fin = 1 to 9 ghz -15 >-20 +10 dbm fin = 9 to 11 ghz -10 >-15 +2 dbm output power [2] fin = 6 ghz 0 3 dbm fin = 9 ghz -5 dbm fin = 11 ghz -8 dbm reverse leakage both rf outputs terminated 45 db ssb phase noise (100 khz offset) pin = 0 dbm, fin = 6 ghz -148 dbc/hz output transition time pin = 0 dbm, fout = 882 mhz 100 ps supply current (icc) [2] 83 ma [1] divider will operate down to dc for square-wave input signal. [2] when operated in high power mode (pin 8 connected to ground).
frequency dividers - chip 1 1 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com -30 -20 -10 0 10 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 input power (dbm) input frequency (ghz) ssb phase noise performance, pin= 0 dbm, t= 25 c input sensitivity window, t= 25 c output power vs. temperature recommended operating window output harmonic content, pin= 0 dbm, t= 25 c input sensitivity window vs. temperature reverse leakage, pin= 0 dbm, t= 25 c -160 -140 -120 -100 -80 -60 -40 -20 0 10 2 10 3 10 4 10 5 10 6 10 7 ssb phase noise (dbc/hz) offset frequency (hz) -50 -40 -30 -20 -10 0 03691215 both output ports terminated one output port terminated power level (dbm) input frequency (ghz) -50 -40 -30 -20 -10 0 03691215 pfeedthru 3rd harmonic output level (dbm) input frequency (ghz) -10 -8 -6 -4 -2 0 2 4 6 8 10 03691215 +25 c +85 c -55 c output power (dbm) input frequency (ghz) -30 -20 -10 0 10 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 min pin +25 c max pin +25 c min pin +85 c max pin +85 c min pin -55 c max pin -55 c input power (dbm) input frequency (ghz) HMC361 v07.0109 gaas hbt mmic divide-by-2, dc - 11 ghz
frequency dividers - chip 1 1 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output voltage waveform, pin= 0 dbm, fout= 882 mhz, t= 25 c absolute maximum ratings outline drawing typical supply current vs vcc rf input (vcc = +5v) +13 dbm vcc +5.5v vlogic vcc -1.6v to vcc -1.2v junction temperature (t j )135 c continuous pdiss (t= 85 c) (derate 15.9 mw/ c above 85 c) 0.79w thermal resistance (r th ) (junction to die bottom) 63 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vcc (v) icc (ma) 4.75 74 5.0 83 5.25 89 note: divider will operate over full voltage range shown above notes; 1. all dimensions in inches (millimeters) 2. all tolerances are 0.001 (0.025) 3. die thickness is 0.004 (0.100) backside is ground 4. bond pads are 0.004 (0.100) square 5. bond pad spacing, ctr-ctr: 0.006 (0.150) 6. backside metallization: gold 7. bond pad metallization: gold electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate wp-8 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. -500 -300 -100 100 300 500 22.7 23.1 23.5 23.9 24.3 24.7 amplitude (mv) time (ns) HMC361 v07.0109 gaas hbt mmic divide-by-2, dc - 11 ghz
frequency dividers - chip 1 1 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1 in rf input 180 out of phase with pad 3 for differential operation. ac ground for single ended operation. 2 in rf input must be dc blocked. 3, 4, 5 vcc supply voltage 5v 0.25v can be applied to pad 3, 4, or 5. 6out divided output 7 out divided output 180 out of phase with out. 8pwr sel in the low power mode, the power select pin is left fl oating. by grounding this pin, the output power is increased by approximately 10 db. 9pwr dwn the power down pin is grounded for normal operation. applying 5 volts to this pin will power down this device. 10 disable the disable pin is grounded for normal operation. applying 5 volts to this pin will disable the input buffer amplifi er. pad description HMC361 v07.0109 gaas hbt mmic divide-by-2, dc - 11 ghz
frequency dividers - chip 1 1 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table assembly diagram ac coupling capacitors. to +5v vcc supply (bypassed via 10 uf capacitor). ac coupling capacitors. optional ac coupled differential input. should be ac grounded for single ended operation. optional ac coupled differential output. for best single ended reverse leakage performance, this port should be terminated into 50 ohm. this port should be grounded for normal operation. applying +5v to this port will disable the input buffer amplifi er. this port should be grounded for normal operation. applying +5v to this port will power down the device. for high power output, this port should be bonded to ground. for low power output, this port should be fl oating. function pin 5v gnd float disable 10 output off output on x pwr dwn 9 power down power up x pwr sel 8x high power output low power output x = state not permitted. HMC361 v07.0109 gaas hbt mmic divide-by-2, dc - 11 ghz
frequency dividers - chip 1 1 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com handling precautions follow these precautions to avoid permanent damage. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and fl at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). HMC361 v07.0109 gaas hbt mmic divide-by-2, dc - 11 ghz
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